e Voltage (V) Tj = 25°C
1
2.5V
≤60µs PULSE WIDTH
Tj = 150°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 10V ≤6.
Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
VDSS Qg
tot
VGS Qgd
4.4nC
R.
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package .
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